jiangsu changji ang electronics technology co.,ltd sot -23 plastic-encap sulate transistors S8050 transi s tor (npn) features z compliment ary to s8550 z collect or current: i c =0.5a marking: j3y electrical chara cteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collecto r-base breakdown voltage v (b r)cb o i c = 100 a, i e =0 40 v collecto r-emitter breakdown voltage v (b r)ce o i c =1 ma, i b = 0 25 v emitter-b a se breakdown voltage v ( br )ebo i e = 100 a, i c =0 5 v co llecto r cut-off current i cb o v cb = 40 v , i e = 0 0.1 a co llecto r cut-off current i ce o v cb = 20v , i e =0 0.1 a emitter cut-off current i ebo v eb = 5v , i c =0 0.1 a h fe(1) v ce =1v, i c = 50ma 120 400 dc cu rr ent gain h fe(2) v ce =1v, i c = 500ma 50 collecto r-emitter saturation voltage v ce (sat) i c = 500 ma, i b = 50ma 0.6 v base -emitter saturation voltage v be (sat) i c = 500 ma, i b = 50ma 1.2 v tr ansition frequency f t v ce =6v , i c = 20 ma f= 30mhz 150 mhz so t -23 1. base 2 . emitter 3. collector classific ation of h fe (1) rank l h j range 120-200 200- 350 300- 400 www.cj-elec.com 1 a,jun,2014 www.cj-elec.com d,oct,2014 j c e t ma ximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cb o collector-base voltage 40 v v ce o collector-emitter voltage 25 v v eb o emitter-base voltage 5 v i c co llector current 500 ma p c co llector power dissipation 300 mw r j a thermal resistance from junction to ambient 417 /w t j jun ction temperature 150 t st g storage temperature -55 +150
1 10 100 10 100 1000 1 10 100 10 100 0.1 1 10 1 100 10 0 25 50 75 100 125 150 0 100 200 300 400 0.2 0.4 0.6 0 .8 1.0 0.1 1 10 100 1 10 100 0.0 0.4 0.8 1.2 04 81 21 62 0 0 20 40 60 80 100 i 7 2 2 , & k ) ( 2 2 com mon emitter v ce =1v 3 30 500 t a =100 t a =25 dc current gain h fe collector current i c (ma) , & 30 300 30 3 collector-emitter saturation volt ag e v ces a t (mv) collector current i c (ma) =10 t a =25 t a =100 , & 9 & ( v d w 2 2 500 500 100 30 10 3 3 0.3 20 c ob c ib reverse volt ag e v (v) f=1mhz i e =0/ i c =0 t a =25 9 & % 9 ( % & r e & l e 2 2 capacitance c ( p f) 10 1000 100 30 v ce =6v t a =25 trans i tion frequency f t (mhz) collector current i c (ma) co llector power dissipation p c (mw) ambient t emperature t a ( ) 3 & 2 2 7 d 500 9 % ( , & 2 2 30 3 0.3 t a =25 t a =100 comm o n emitter v ce =1v collector current i c (ma) base-em m iter voltage v be (v) 30 3 =10 base-emit t er saturation voltage v bes at (v) collector current i c (ma) t a =25 t a =100 500 , & 9 % ( v d w 2 2 6 w d w l f & k d u d f w h u l v w l f collector current i c (ma) collector-em itter voltage v ce (v) 400ua 350ua 300ua 250ua 200ua 150ua 100ua i b =50ua c ommon emitter t a =25 z z z f m h o h f f r p $ - x q z z z f m h o h f f r p ' 2 f w 7 \ s l f d o & k d u d f w h u l v w l f v
min m a x min max a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 8 0 0.550 ref 0.022 ref symbol dimensions in inches dimensions in millimeters 0.950 typ 0.037 typ 6 2 7 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 a,jun,2014 www.cj-elec.com d,oct,2014
6 2 7 7 d s h d q g 5 h h o www.cj-elec.com 4 a,jun,2014 www.cj-elec.com d,oct,2014
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